Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• unpredictable programming feature in phase-change memory devices can be utilized in hardware security applications. Keywords: amorphous materials; drift; electrical breakdown; electrical resistivity; phase-change memory; pulse measurement; stochastic processes; threshold switching; Introduction Phase-change

• by an electrical breakdown due to impact ionization, a purely electrical effect. The following sharp increase in current is ascribed to thermal runaway (i.e., a decrease in resistivity with increasing temperature that leads to further heating [17]). In this work, we use this model to interpret our

• Ethreshold(t) at different measured time values, t on different cells programmed to a similar amorphous resistance. Equation 3 and γ = 0.02 were used to calculate Lamorphized and the associated variability. It is important to note that the term “electrical breakdown” here refers to the reversible threshold

High permittivity, breakdown strength, and energy storage density of polythiophene-encapsulated BaTiO₃ nanoparticles

• Adnanullah Khan,
• Amir Habib and
• Adeel Afzal

Beilstein J. Nanotechnol. 2020, 11, 1190–1197, doi:10.3762/bjnano.11.103

• ) have been prepared and used in actuators, capacitors, and communication devices [4][5][6]. However, the ceramic-based dielectrics are often brittle, and possess low electrical breakdown strength and energy storage density [7], which hampers their practical applications in energy storage devices such as

• density and electrical breakdown strength (b) of the different dielectric materials. A comparison of the electrical properties of core–shell BTO-PTh nanoparticles with other BTO-polymer composite dielectric materials reported in literature.

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• contact area [8][10][11][54], observe the electrical breakdown mechanism for a single nanostructure [55][56][57][58], and investigate the dynamic processes occurring in the switch nanocontact [54]. The durability of a NEM switch strongly depends on the evolution of the contact between the switching

• mechanical strain [124][125], their electrical breakdown and mass loss caused by field evaporation [126]. Graphene: For fabricating NEM switches, monolayer [24][25][26][27] as well as few-layer [28][29][30][31] graphene materials are used. The mechanical properties are decisive for selecting the number of

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• the results obtained for bent transistors, that the encapsulation layer substantially improves mechanical properties of the devices. Parylene C as a gate insulating layer The purity of thin dielectric films has a tremendous impact on their electrical properties. Results of electrical breakdown voltage

Liquid permeation and chemical stability of anodic alumina membranes

• Dmitrii I. Petukhov,
• Dmitrii A. Buldakov,
• Alexey A. Tishkin,
• Alexey V. Lukashin and
• Andrei A. Eliseev

Beilstein J. Nanotechnol. 2017, 8, 561–570, doi:10.3762/bjnano.8.60

• with a constant rate of 1 V·s−1 in order to avoid electrical breakdown of the oxide film on the first step. The thickness of the formed films was coulometrically controlled, resulting in 100 µm thick membranes [28]. After anodization, the oxide films were separated from the metallic substrates by

Blue and white light emission from zinc oxide nanoforests

• Nafisa Noor,
• Luca Lucera,
• Thomas Capuano,
• Venkata Manthina,
• Alexander G. Agrios,
• Helena Silva and
• Ali Gokirmak

Beilstein J. Nanotechnol. 2015, 6, 2463–2469, doi:10.3762/bjnano.6.255

• heating, the current paths will change depending on the temperature dependence of the resistivity of these two materials. Due to the large difference in resistivity, however, it is likely that the current flows mostly through the polysilicon substrate until the electrical breakdown of air or the ZnO

Electrochemical coating of dental implants with anodic porous titania for enhanced osteointegration

• Amirreza Shayganpour,
• Alberto Rebaudi,
• Pierpaolo Cortella,
• Alberto Diaspro and
• Marco Salerno

Beilstein J. Nanotechnol. 2015, 6, 2183–2192, doi:10.3762/bjnano.6.224

• described to be of a different nature than for Al [25]. The APT pattern was ascribed to a pitting regime of anodization, occurring above the electrical breakdown threshold for the material, which would probably account for the more disordered appearance of the emerging pores with respect to those of APA. In

Current–voltage characteristics of manganite–titanite perovskite junctions

• Benedikt Ifland,
• Patrick Peretzki,
• Birte Kressdorf,
• Philipp Saring,
• Andreas Kelling,
• Michael Seibt and
• Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

• observation, an electrical breakdown would irreversibly change the junction. In comparison to the process introduced by Giebink et al. [38][39], here, the rate r may not represent a pure polaron pair dissociation rate. This is because the strong electric field at the interface may increase the polaron